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Direction analysis device Product List

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[Analysis Case] Evaluation of Composition Distribution in the Active Layer of Organic Thin-Film Solar Cells

[Analysis Case] Evaluation of Composition Distribution in the Active Layer of Organic Thin-Film Solar Cells

Preprocessing and depth direction analysis are possible under controlled atmosphere conditions.

In bulk heterojunction solar cells using p-type and n-type material active layers, it is necessary to properly control the mixing state of the materials within the film. After performing annealing treatment post-deposition, we conducted TOF-SIMS depth profiling analysis on samples that showed an improvement in photoelectric conversion efficiency along with an increase in fill factor without any change in open-circuit voltage. As a result, it was found that PCBM was segregated at the interface with the PEDOT:PSS layer before annealing.

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[Analysis Case] Evaluation of the Interface between the Alq3 Layer and the Emission Layer of Organic EL Devices

[Analysis Case] Evaluation of the Interface between the Alq3 Layer and the Emission Layer of Organic EL Devices

Degradation assessment by depth profiling using TOF-SIMS.

As a result of performing pre-treatment to depth direction analysis without exposing the organic layer of the degraded brightness element to the atmosphere, diffusion was observed at the Alq3/emission layer interface in the samples after applying voltage. Similar results were obtained from both Slope Mapping (Figure 1) and depth direction analysis using ion sputtering (Figure 2).

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[Analysis Case] Evaluation of Depth Profile Concentration Distribution of Alkali Metals in SiO2 by GCIB

[Analysis Case] Evaluation of Depth Profile Concentration Distribution of Alkali Metals in SiO2 by GCIB

Evaluation of impurities in SiO2 films

Alkali metals such as Li, Na, and K are key elements that cause various failures in semiconductors. These are referred to as mobile ions that can move within the film during measurement, making it difficult to obtain an accurate distribution. In this study, by conducting depth-direction analysis using a GCIB (Ar cluster) with a sputter ion source in TOF-SIMS, it was found that the movement of alkali metals can be suppressed even at room temperature compared to oxygen sputter guns. This measurement allows for qualitative and quantitative analysis of impurities within SiO2 films. Measurement method: TOF-SIMS Product fields: LSI, memory, electronic components Analysis purpose: Trace concentration evaluation For more details, please download the materials or contact us.

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Evaluation of the printed layer on the metal surface

Evaluation of the printed layer on the metal surface

Conduct cross-sectional structural analysis and depth-direction analysis using TOF-SIMS! It is possible to confirm the distribution of components from the surface coating layer to the metal and the coloring components.

As an evaluation of the quality of the printed layer on the metal surface, the bonding state with the metal and the dispersion state of the coloring components can be observed through cross-sectional processing. Additionally, by conducting depth-direction analysis using TOF-SIMS with GCIB from the surface, the distribution of components from the surface coating layer to the metal and the coloring components can be confirmed. Please feel free to contact us when needed. 【GCIB Features】 ■ The energy per ion beam atom is low, making it suitable for depth-direction analysis of organic films and others. ■ High mass number fragments that reflect the molecular structure information of the film can be detected. *For more details, please download the PDF or feel free to contact us.

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